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TGM2635-CP x-band 100 w gan power amplifier datasheet: rev - 11-30-15 - 1 of 14 - disclaimer: subject to change without notice ? 2015 triquint www.triquint.com , www.qorvo.com pad configuration pad no. symbol 1 v g1 2, 4, 7, 9 gnd 3 rf input 5 v g2 6 v d2 8 rf output 10 v d1 applications ? x-band radar ? satellite communications ? data links general description qorvo?s tgm2635?cp is a packaged x-band, high power amplifier fabricated on qorvo?s production 0. 25um gan on sic process. the tgm2635?cp operates from 7.9 ? ? ? 11 ghz and provides 100 w of saturated output power with 22.5 db of large signal gain and greater than 35 % power?added efficiency. the TGM2635-CP is packaged in a 10-lead 19.05 x 19.05 mm bolt-down package with a pure cu base for superior thermal management. both rf ports are internally dc blocked and matched to 50 ohms allowi ng for simple system integration. the TGM2635-CP is ideally suited for both military and commercial x?band radar systems, satellite communications systems, and data links. lead-free and rohs compliant. evaluation boards are available upon request. ordering information part eccn description TGM2635-CP 3a001.b.2.b x-band 100 w gan power amplifier product features ? frequency range: 7.9 ? 11 ghz ? p sat : > 50 dbm (p in = 28 dbm) ? pae: > 35% ( p in = 28 dbm) ? large signal gain: > 22 db ( p in = 28 dbm) ? small signal gain: > 26 db ? bias: v d = 28 v, i dq = 1.3 a, v g = -2.6 v typical ? package dimensions: 19.05 x 19.05 x 4.52 mm ? performance under pulsed operation functional block diagram
TGM2635-CP x-band 100 w gan power amplifier datasheet: rev - 11-30-15 - 2 of 14 - disclaimer: subject to change without notice ? 2015 triquint www.triquint.com , www.qorvo.com absolute maximum ratings parameter value drain voltage (v d ) 40 v gate voltage range (v g ) -8 to -0 v drain current (i d ) 16 a gate current (i g ) at t ch = 200 c -52 / 124 ma power dissipation (p diss ), 85c, pulsed; pw = 100 us, dc = 10% 316 w input power (p in ), 50 , 85c , v d = 28 v, pulsed; pw = 100 us, dc = 10% 33 dbm input power (p in ), 85c, vswr 3:1, v d = 28 v, pulsed; pw = 100 us, dc = 10% 33 dbm channel temperature (t ch ) 275 c mounting temperature (30 seconds) 260 c storage temperature -55 to 150 c operation of this device outside the parameter rang es given above may cause permanent damage. these are stress ratings only, and functional operation of the device at these conditions is not implied. recommended operating conditions parameter value drain voltage (v d ) 28 v drain current (i dq ) 1.3 a (total) gate voltage (v g ) -2.6 v (typ.) operating temperature range ?40 to 85 ? c electrical specifications are measured at specified test conditions. specifications are not guaranteed over all recommended operating conditions. electrical specifications test conditions unless otherwise noted: 25 c , v d = 28 v, i dq = 1.3 a, v g = -2.6 v typical, pw = 100 us, duty cycle = 10% parameter min typical max units operational frequency range 7.9 11 ghz small signal gain > 26 db input return loss > 12 db output return loss > 12 db power gain (p in = 28 dbm), pulsed > 22.5 db output power (p in = 28 dbm), pulsed > 50 dbm power added efficiency (p in = 28 dbm), pulsed > 35 % small signal gain temperature coefficient -0.064 db/c output power temperature coefficient (temp: 25 c ? ? ? 85 c, p in = 28 dbm) -0.010 db/c recommended operating voltage 20 28 30 v
TGM2635-CP x-band 100 w gan power amplifier datasheet: rev - 11-30-15 - 3 of 14 - disclaimer: subject to change without notice ? 2015 triquint www.triquint.com , www.qorvo.com thermal and reliability information parameter test conditions value units thermal resistance ( jc ) (1) t base = 85c v d = 28 v, i dq = 1.3 a p diss = 36.4 w 0.60 oc/w channel temperature (t ch ) (no rf drive) 107 c median lifetime (t m ) 3.44e11 hrs thermal resistance ( jc ) (1) t base = 85c, v d = 28 v, i dq = 1.3 a, freq = 9.0 ghz, i d_drive = 11 a, p in = 28 dbm, p out = 50.0 dbm, p diss = 173 w, pw = 100 us, dc = 10% 0.47 oc/w channel temperature (t ch ) (under rf drive) 166 c median lifetime (t m ) 3.21e08 hrs thermal resistance ( jc ) (1) t base = 85c, v d = 28 v, i dq = 1.3 a, freq = 9.0 ghz, i d_drive = 12 a, p in = 31 dbm, p out = 50.5 dbm, p diss = 195 w, pw = 100 us, dc = 10% 0.47 oc/w channel temperature (t ch ) (under rf drive) 176 c median lifetime (t m ) 1.18e08 hrs notes: 1. thermal resistance measured to back of package. median lifetime test conditions: v d = 28 v; failure criteria = 10% reduction in i d_max 0 50 100 150 200 250 300 7 8 9 10 11 12 disspiated power (w) frequency (ghz) TGM2635-CP pdiss vs. frequency 25v 100us 10% 25c 28v 100us 10% 25c 30v 100us 10% 25c 0 50 100 150 200 250 300 7 8 9 10 11 12 disspiated power (w) frequency (ghz) TGM2635-CP p diss vs. freq. vs. t base -40 deg c 25 deg c 85 deg c p in = 28 dbm, pulse width = 100 us, duty cycle = 10% 0 50 100 150 200 250 300 7 8 9 10 11 12 disspiated power (w) frequency (ghz) TGM2635-CP p diss vs. freq. vs. p in 24 dbm 26 dbm 28 dbm temp = 25 c, pulse width = 100 us, duty cycle = 10%
TGM2635-CP x-band 100 w gan power amplifier datasheet: rev - 11-30-15 - 4 of 14 - disclaimer: subject to change without notice ? 2015 triquint www.triquint.com , www.qorvo.com p typical performance: small signal (cw) test conditions unless otherwise noted: 25 c , v d = 28 v 0 5 10 15 20 25 30 35 6 7 8 9 10 11 12 13 s21 (db) frequency (ghz) gain vs. freq. vs. temp. -40c +25c +85c v d = 28 v i dq = 1.3 a -30 -25 -20 -15 -10 -5 0 6 7 8 9 10 11 12 13 s11 (db) frequency (ghz) input rl vs. freq. vs. temp. -40c +25c +85c v d = 28 v, i dq = 1.3 a -30 -25 -20 -15 -10 -5 0 6 7 8 9 10 11 12 13 s22 (db) frequency (ghz) output rl vs. freq. vs. temp. -40c +25c +85c v d = 28 v, i dq = 1.3 a 0 5 10 15 20 25 30 35 6 7 8 9 10 11 12 13 s21 (db) frequency (ghz) gain vs. frequency vs. i dq 1.3 a 2.0 a v d = 28 v, t = 25 c 0 5 10 15 20 25 30 35 6 7 8 9 10 11 12 13 s21 (db) frequency (ghz) gain vs. frequency vs. v d 25 v 28 v 30 v i dq = 1.3 a, t = 25 c
TGM2635-CP x-band 100 w gan power amplifier datasheet: rev - 11-30-15 - 5 of 14 - disclaimer: subject to change without notice ? 2015 triquint www.triquint.com , www.qorvo.com typical performance: small signal (cw) test conditions unless otherwise noted: 25 c , v d = 28 v -30 -25 -20 -15 -10 -5 0 6 7 8 9 10 11 12 13 s11 (db) frequency (ghz) input rl vs. freq. vs. i dq 1.3 a 2.0 a v d = 28 v, t = 25 c -30 -25 -20 -15 -10 -5 0 6 7 8 9 10 11 12 13 s11 (db) frequency (ghz) input rl vs. frequency vs. v d 25 v 28 v 30 v i dq = 1.3 a, t = 25 c -30 -25 -20 -15 -10 -5 0 6 7 8 9 10 11 12 13 s22 (db) frequency (ghz) output rl vs. freq. vs. i dq 1.3 a 2.0 a v d = 28 v, t = 25 c -30 -25 -20 -15 -10 -5 0 6 7 8 9 10 11 12 13 s22 (db) frequency (ghz) output rl vs. frequency vs. v d 25 v 28 v 30 v i dq = 1.3 a, t = 25 c
TGM2635-CP x-band 100 w gan power amplifier datasheet: rev - 11-30-15 - 6 of 14 - disclaimer: subject to change without notice ? 2015 triquint www.triquint.com , www.qorvo.com typical performance: large signal (pulsed) test conditions unless otherwise noted: 25 c , v d = 28 v, i dq = 1.3 a, pw = 100 us, duty cycle = 10% 40 42 44 46 48 50 52 54 7 8 9 10 11 12 output power (dbm) frequency (ghz) output power vs. frequency vs. temp. -40 deg c +25 deg c +85 deg c v d = 28 v, i dq = 1.3 a, p in = 28 dbm 40 42 44 46 48 50 52 54 7 8 9 10 11 12 output power (dbm) frequency (ghz) output power vs. freq. vs. v d 25 v 28 v 30 v i dq = 1.3 a, p in = 28 dbm, t = 25 c 10 15 20 25 30 35 40 45 7 8 9 10 11 12 pae (%) frequency (ghz) pae vs. frequency vs. temp. -40 deg c +25 deg c +85 deg c v d = 28 v, i dq = 1.3 a, p in = 28 dbm 10 15 20 25 30 35 40 45 7 8 9 10 11 12 pae (%) frequency (ghz) pae vs. frequency vs. v d 25 v 28 v 30 v i dq = 1.3 a, p in = 28 dbm, t = 25 c 3 4 5 6 7 8 9 10 11 12 13 14 15 7 8 9 10 11 12 drain current (a) frequency (ghz) drain current vs. frequency vs. temp. -40 deg c +25 deg c +85 deg c v d = 28 v, i dq = 1.3 a, p in = 28 dbm 3 4 5 6 7 8 9 10 11 12 13 14 15 7 8 9 10 11 12 drain current (a) frequency (ghz) drain current vs. frequency vs. v d 25 v 28 v 30 v i dq = 1.3 a, p in = 28 dbm, t = 25 c
TGM2635-CP x-band 100 w gan power amplifier datasheet: rev - 11-30-15 - 7 of 14 - disclaimer: subject to change without notice ? 2015 triquint www.triquint.com , www.qorvo.com typical performance: large signal (pulsed) test conditions unless otherwise noted: 25 c , v d = 28 v, i dq = 1.3 a, pw = 100 us, duty cycle = 10% -2 -1 0 1 2 3 4 5 6 7 8 9 10 7 8 9 10 11 12 gate current (ma) frequency (ghz) gate current vs. frequency vs. temp. -40 deg c +25 deg c +85 deg c v d = 28 v, i dq = 1.3 a, p in = 28 dbm -0.4 -0.2 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 7 8 9 10 11 12 gate current (ma) frequency (ghz) gate current vs. frequency vs. v d 25 v 28 v 30 v i dq = 1.3 a, p in = 28 dbm, t = 25 c 40 42 44 46 48 50 52 54 7 8 9 10 11 12 output power (dbm) frequency (ghz) output power vs. frequency vs. p in 24 dbm 26 dbm 28 dbm 29 dbm v d = 28 v, i dq = 1.3 a, t = 25 c 10 15 20 25 30 35 40 45 7 8 9 10 11 12 pae (%) frequency (ghz) pae vs. frequency vs. p in 24 dbm 26 dbm 28 dbm 29 dbm v d = 28 v, i dq = 1.3 a, t = 25 c 3 4 5 6 7 8 9 10 11 12 13 14 15 7 8 9 10 11 12 drain current (a) frequency (ghz) drain current vs. frequency vs. p in 24 dbm 26 dbm 28 dbm 29 dbm v d = 28 v, i dq = 1.3 a, t = 25 c -0.6 -0.4 -0.2 0.0 0.2 0.4 0.6 0.8 1.0 1.2 7 8 9 10 11 12 gate current (ma) frequency (ghz) gate current vs. frequency vs. p in 24 dbm 26 dbm 28 dbm 29 dbm v d = 28 v, i dq = 1.3 a, t = 25 c
TGM2635-CP x-band 100 w gan power amplifier datasheet: rev - 11-30-15 - 8 of 14 - disclaimer: subject to change without notice ? 2015 triquint www.triquint.com , www.qorvo.com typical performance: large signal (pulsed) test conditions unless otherwise noted: 25 c , v d = 28 v, i dq = 1.3 a, pw = 100 us, duty cycle = 10% 40 42 44 46 48 50 52 14 16 18 20 22 24 26 28 30 output power (dbm) input power (dbm) output power vs. input power vs. freq. 8.0 ghz 9.5 ghz 11.0 ghz v d = 28 v, i dq = 1.3 a, temp. = 25 c 10 15 20 25 30 35 40 45 14 16 18 20 22 24 26 28 30 pae (%) input power (dbm) pae vs. input power vs. freq. 8.0 ghz 9.5 ghz 11.0 ghz v d = 28 v, i dq = 1.3a, temp. = 25 c 3 4 5 6 7 8 9 10 11 12 13 14 15 14 16 18 20 22 24 26 28 30 drain current (a) input power (dbm) drain current vs. input power vs. freq. 8.0 ghz 9.5 ghz 11.0 ghz v d = 28 v, i dq = 1.3 a, temp. = 25 c -0.4 -0.2 0.0 0.2 0.4 0.6 0.8 1.0 14 16 18 20 22 24 26 28 30 gate current (a) input power (dbm) gate current vs. input power vs. freq. 8.0 ghz 9.5 ghz 11.0 ghz v d = 28 v, i dq = 1.3 a, temp. = 25 c
TGM2635-CP x-band 100 w gan power amplifier datasheet: rev - 11-30-15 - 9 of 14 - disclaimer: subject to change without notice ? 2015 triquint www.triquint.com , www.qorvo.com typical performance: large signal (pulsed) test conditions unless otherwise noted: 25 c , v d = 28 v, i dq = 1.3 a, pw = 100 us, duty cycle = 10% -60 -55 -50 -45 -40 -35 -30 -25 -20 -15 -10 -5 0 7 8 9 10 11 12 2nd harmonic (dbc) frequency (ghz) 2nd harmonic vs. frequency vs. temp. -40c +25c +85c v d = 28 v, i dq = 1.3 a, pin = 10 dbm -60 -55 -50 -45 -40 -35 -30 -25 -20 -15 -10 -5 0 7 8 9 10 11 12 2nd harmonic (dbc) frequency (ghz) 2nd harmonic vs. frequency vs. temp. -40c +25c +85c v d = 28 v, i dq = 1.3 a, pin = 15 dbm -60 -55 -50 -45 -40 -35 -30 -25 -20 -15 -10 -5 0 7 8 9 10 11 12 2nd harmonic (dbc) frequency (ghz) 2nd harmonic vs. frequency vs. temp. -40c +25c +85c v d = 28 v, i dq = 1.3 a, pin = 20 dbm -60 -55 -50 -45 -40 -35 -30 -25 -20 -15 -10 -5 0 7 8 9 10 11 12 2nd harmonic (dbc) frequency (ghz) 2nd harmonic vs. frequency vs. temp. -40c +25c +85c v d = 28 v, i dq = 1.3 a, pin = 25 dbm -60 -55 -50 -45 -40 -35 -30 -25 -20 -15 -10 -5 0 7 8 9 10 11 12 2nd harmonic (dbc) frequency (ghz) 2nd harmonic vs. frequency vs. temp. -40c +25c +85c v d = 28 v, i dq = 1.3 a, pin = 30 dbm -60 -55 -50 -45 -40 -35 -30 -25 -20 -15 -10 -5 0 7 8 9 10 11 12 2nd harmonic (dbc) frequency (ghz) 2nd harmonic vs. frequency vs. p in 10 dbm 25 dbm 15 dbm 30 dbm 20 dbm
TGM2635-CP x-band 100 w gan power amplifier datasheet: rev - 11-30-15 - 10 of 14 - disclaimer: subject to change without notice ? 2015 triquint www.triquint.com , www.qorvo.com application circuit note: v g1 and v g2 , and v d1 and v d2 , respectively, can be tied together. bias-up procedure bias-down procedure 1. set i d limit to 16 a, i g limit to 124 ma 1. turn off rf signal 2. set v g to ?5.0 v 2. reduce v g to ?5.0v. ensure i dq ~ 0ma 3. set v d +28 v 3. set v d to 0v 4. adjust v g more positive until i dq = 1.3 a (v g ~ ?2.6 v typical) 4. turn off v d supply 5. turn off v g supply 5. apply rf signal
TGM2635-CP x-band 100 w gan power amplifier datasheet: rev - 11-30-15 - 11 of 14 - disclaimer: subject to change without notice ? 2015 triquint www.triquint.com , www.qorvo.com evaluation board and mounting detail rf layer is 0.008? thick rogers corp. ro40003c ( r = 3.35). metal layers are 1.0 oz. copper. the micr ostrip line at the connector interface is optimized for the southw est microwave end launch connector 1092-02a-5. v g1 and v g2 , and v d1 and v d2 , respectively, can be tied together. reference des. component value manuf. part number c3, c6 surface mount cap 10 uf, 20 %, 50 v (1206), x5r various c2, c5, c8, c11 surface mount cap 0.1 uf, 10 %, 50 v (0805), x7r various
TGM2635-CP x-band 100 w gan power amplifier datasheet: rev - 11-30-15 - 12 of 14 - disclaimer: subject to change without notice ? 2015 triquint www.triquint.com , www.qorvo.com mechanical drawing & pad description pin number label description 1 v g1 gate voltage stage 1. bias network is required; see application circuit as an example 2, 4, 7, 9 gnd rf ground 3 rf input rf input; matched to 50 ? ; dc blocked 5 v g2 gate voltage stage 2. bias network is required; see application circuit as an example 6 v d2 drain voltage stage 2. bias network is required; se e application ci rcuit as an example. 8 rf output rf output; matched to 50 ? ; dc blocked, dc shorted 10 v d1 drain voltage stage 1. bias network is required; s ee application circuit as an example
TGM2635-CP x-band 100 w gan power amplifier datasheet: rev - 11-30-15 - 13 of 14 - disclaimer: subject to change without notice ? 2015 triquint www.triquint.com , www.qorvo.com assembly notes 1. clean the pcb, heat sink, and module with alcoho l. allow it to dry fully. 2. nylock screws are recommended for mounting the t gm2635-cp to a heat sink. 3. to improve the thermal and rf performance, we re commend the following: a. mount the part to a high thermal conductivity he at sink. b. apply arctic silver thermal compound or a 4 mils thick indium shim between the package and the heat sink. c. do not mount the part to a pcb, even when using thermal vias. 4. apply solder to each pin of the TGM2635-CP. 5. clean the assembly with alcohol.
TGM2635-CP x-band 100 w gan power amplifier datasheet: rev - 11-30-15 - 14 of 14 - disclaimer: subject to change without notice ? 2015 triquint www.triquint.com , www.qorvo.com important notice the information contained herein is believed to be reliable. triquint makes no warranties regarding the informat ion contained herein. triquint assumes no responsibility or liability wha tsoever for any of the information contained herein . triquint assumes no responsibility or liability wha tsoever for the use of the information contained he rein. the information contained herein is provided "as is, wh ere is" and with all faults, and the entire risk as sociated with such information is entirely with the user. all informa tion contained herein is subject to change witho ut notice. customers should obtain and verify the latest relevant inform ation before placing orders for triquint products. the information contained herein or any use of such information doe s not grant, explicitly or implicitly, to any party any patent r ights, licenses, or any other intellectual property rights , whether with regard to such information itself or anything described by such information. triquint products are not warranted or authorized f or use as critical components in medical, life-savi ng, or life- sustaining applications, or other applications where a failure would reasonably be expected to cause severe perso nal injury or death. contact information for the latest specifications, additional product i nformation, worldwide sales and distribution locati ons, and information about triquint: web: www.triquint.com tel: +1.972.994.8465 email: info-sales@triquint.com fax: +1.972.994.8504 for technical questions and application information : email: info-products@triquint.com product compliance information esd sensitivity ratings caution! esd-sensitive device esd rating: tbd value: tbd test: human body model (hbm) standard: jedec standard jesd22-a114 solderability compatible with the latest version of j-std-020 lea d free solder, 260 c. rohs?compliance this part is compliant with eu 2002/95/ec rohs dire ctive (restrictions on the use of certain hazardous substances in electrical and electronic equipment). this product also has the following attributes: ? lead free ? halogen free (chlorine, bromine) ? antimony free ? tbbp-a (c 15 h 12 br 4 0 2 ) free ? pfos free ? svhc free msl rating level 5a at 260 c convection reflow the part is rated moisture sensitivity level 5a jedec standard ipc/jedec j-std-020. eccn us department of commerce: 3a001.b.2.b

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